Semiconductor memory device

ABSTRACT

A semiconductor memory device comprises a first core section including a plurality of memory cell arrays, a second core section including a plurality of memory cell arrays and provided below the first core section, a third core section including a plurality of memory cell arrays and provided in a right side of the first core section, and a fourth core section including a plurality of memory cell arrays and provided in a right side of the second core section, wherein at least a part of the memory cell arrays of the first core section and at least a part of the memory cell arrays of the fourth core section are simultaneously activated, and at least a part of the memory cell arrays of the second core section and at least a part of the memory cell arrays of the third core section are simultaneously activated.

This application is a division of prior application Ser. No. 09/058,218filed Apr. 10, 1998 now U.S. Pat. No. 6,069,835.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor memory device havingmemory cells, and particularly, to a semiconductor memory device havingmemory cell arrays divided longitudinally and laterally into four coresections.

To reduce operational currents of a semiconductor memory device, memorycell arrays are dispersively activated. In recent years, to furtherreduce operational currents, all memory cell arrays are divided into twogroups, one of the two groups is selected, and memory cell arraysbelonging to the selected group are dispersively activated.

FIG. 1 shows a structure of a conventional semiconductor memory device.In the following, same components are denoted by same reference symbols,and reiteration of those components will be omitted.

Core sections 1 to 4 generally have equal memory capacities. The coresections 1, 2, 3 and 4 are respectively positioned at the upper left,lower left, upper right, and lower right of a chip CP.

An address buffer 11 is provided at an area between the core sections 3and 4, for example. The address buffer 11 is supplied with externaladdress signals A0 to A11 from a pad in the chip CP and generatescontrol signals RAt11 and RAc11 from, for example, an address signalA11.

Core section buffers 5 to 8 are arranged adjacent to the core sections 1to 4, respectively. The core section buffers 5 and 6 are supplied with acontrol signal RAt11 outputted from the address buffer 11, and the coresection buffers 7 and 8 are supplied with a control signal RAc11outputted from the address buffer 11. The core section buffers 5 to 8respectively activate the core sections 1 to 4 in accordance with thecontrol signals RAt11 and RAc11.

Each of the core sections 1 to 4 comprises a plurality of memory cellarrays 10, sense amplifiers 90 connected to the memory cell arrays 10,and circuits (not shown) for selecting memory cells in accordance with asignal, such as an array decoder and a row decoder. As shown in FIG. 1,the memory cell arrays 10 and sense amplifiers 9 are disposedalternately, and each of the sense amplifiers 9 is shared by two memorycell arrays 10. The array decoder selects one or more memory cell arraysin a core section to be activated by an instruction, in accordance withan upper bit of an address signal supplied through a core sectionbuffer. The row decoder selects a word line of the memory cell arrayselected by the array decoder, in accordance with a lower bit of anaddress signal supplied through a core section buffer.

Peripheral circuits 12 such as row decoders and column decodersdescribed above are provided between the core sections 1 and 2, 3 and 4,1 and 3, as well as 2 and 4.

A plurality of pads 50 are provided at the areas where the peripheralcircuits 12 are provided such that the pads are disposed laterally, forexample. A part of the pads are used as power supply pads.

The following will be an explanation of a method of activating memorycell arrays divided into four core sections.

An address buffer 11 generates control signals RAt11 and RAc11 relatingto rows, from a bit A11 of an external address signal. The controlsignal RAc11 is an inverted signal of the control signal RAt11. In thefollowing, “c” indicates an inverted signal and “t” indicates anon-inverted signal.

Where the signal RAt11 is of a selected state and the signal RAc11 is ofa non-selected state, the upper left core section 1 and the lower leftcore section 2 are selected. In this state, the upper right core section3 and the lower right core section 4 are not selected and deactivated.

Further, memory cells of each of the selected core sections 1 and 2 aredivided into two groups, and memory cells belonging to one of the groupsare activated in accordance with an upper address of the address signal.FIG. 1 shows a semiconductor memory device in this state. In the figure,those memory cell arrays 10 and sense amplifiers 9 which are hatched byoblique lines indicate activated arrays and sense amplifiers.

Where the signal RAt11 is of a non-selected state and the signal RAc11is of a selected state, the memory cells of the upper right core section3 and the lower right core section 4 are activated.

When a bit line is charged or discharged by sense amplifiers, e.g., whenthe potential of a bit line is changed from ½×Vcc to Vcc or Vss, noiseis generated by the switching operation of a transistor for connecting asense amplifier with a bit line.

In a conventional semiconductor memory device, activated cell arrays areconcentrated at the left or right half of the semiconductor memorydevice. When the core sections 1 and 2 are activated, noise is generatedconcentrically in the left half of the semiconductor memory device. Whenthe core sections 3 and 4 are activated, noise is generatedconcentrically in the right half of the semiconductor memory device.

The noise thus generated is reflected on power supply lines or the likeand influences the operation of input pins and peripheral circuits inthe vicinity of the activated core sections. Specifically, the potentialof power supply lines supplied with a voltage Vss rises therebyhindering supply of a Vss level. As a result, threshold voltages and thelike of elements forming sense amplifiers and peripheral circuits arechanged, and associated circuits cause operation errors.

In FIG. 2, it is supposed that a power supply pad 13 supplied with avoltage Vss is provided in the left side of an area between the coresections 1 and 2, and a power supply pad 14 supplied with a voltage Vccis provided in the right side of an area between the core sections 3 and4. FIG. 2 shows a case where the core sections 3 and 4 are activated andarrows in this figure indicate main flows of currents to a power supplypad.

Power supply lines from the power supply pad 13 to the core sections 3and 4 are longer than power supply lines from the power supply pad 13 tothe core sections 1 and 2. Therefore, a voltage drop caused in the powersupply lines is large when the core sections 3 and 4 are activated. Aninfluence from the voltage drop in the power supply lines when the coresections 3 and 4 are activated is therefore greater than that when thecore sections 1 and 2 are activated.

In FIG. 3, it is supposed that a power supply pad pair 15 respectivelysupplied with voltages Vcc and Vss is provided in the left side of anarea between the core sections 1 and 2, and another power supply padpair 16 respectively supplied with voltages is provided in the rightside of an area between the core sections 3 and 4. Arrows in this figureindicate main flows of currents to the power supply pads.

In this case, a length of power supply lines from the left power supplypad pair 15 to the core sections 1 and 2 are substantially the same asthat of the power supply lines from the right power supply pad pair 16.Therefore, unlike the example shown in FIG. 2, an influence from avoltage drop does not vary much depending on the positions of activatedcore sections.

However, when the core sections 1 and 2 are activated, currentsconcentrically flow through the left power supply pad pair 15. When thecore sections 3 and 4 are activated, currents concentrically flowthrough the right power supply pad pair 16.

Generally, a semiconductor chip is sealed on a lead frame by resin andpads such as power supply pads are connected to inner leads by bondingwires thereto. A packaged semiconductor device is set on a board andouter leads are connected to wires on the board. Therefore, a padsupplied with a voltage Vss is applied with inductance from the leadframe and the wires on the board. Where L is the inductance applied tothe power supply pad, noise is expressed as L×di/dt. Therefore, asdescribed above, large noise is generated by the inductance when acurrent concentrically flows through one pair of power supply pads.

Thus, power supply noise caused by resistance or inductance reaches sucha level that significantly influences the operation of circuits.

BRIEF SUMMARY OF THE INVENTION

The present invention has an object of reducing generation of noise in asemiconductor memory device in which memory cell arrays are activateddispersively.

A semiconductor memory device according to the present inventioncomprises at least four memory cell arrays arranged in matrix, whereinthe memory cell arrays are activated to prevent from simultaneouslyactivating memory cell arrays arranged longitudinally.

Specifically, a semiconductor memory device has a following structure.

A semiconductor memory device according to the present inventioncomprises a first core section including a plurality of memory cellarrays; a second core section including a plurality of memory cellarrays and provided below the first core section; a third core sectionincluding a plurality of memory cell arrays and provided in a right sideof the first core section; and a fourth core section including aplurality of memory cell arrays and provided in a right side of thesecond core section, wherein at least a part of the memory cell arraysof the first core section and at least a part of the memory cell arraysof the fourth core section are simultaneously activated, and at least apart of the memory cell arrays of the second core section and at least apart of the memory cell arrays of the third core section aresimultaneously activated.

Another semiconductor memory device according to the present inventioncomprises a first core section including a plurality of memory cellarrays; a second core section including a plurality of memory cellarrays and provided below the first core section; a third core sectionincluding a plurality of memory cell arrays and provided in a right sideof the first core section; a-fourth core section including a pluralityof memory cell arrays and provided in a right side of the second coresection; and an address buffer having an input terminal supplied with anaddress signal, for outputting a first or second activation signal inaccordance with a part of the address signal, the first activationsignal making the first and fourth core sections be activated and thesecond activation signal making the second and third core sections beactivated.

Preferred embodiments of the present invention are as follows.

(1) A first power supply line connected to the first and third coresections and provided along lower edges of the first and third coresections; a second power supply line connected to the second and fourthcore sections and provided along upper edges of the second and fourthcore sections and below the first power supply line; and a wire forconnecting the first and second power supply lines with each other at anarea between the first and second core sections and at an area betweenthe third and fourth core sections are further provided.

(2) In the above (1), a plurality of pads are provided between the firstand second power supply lines and the wire is provided at an areabetween the pads.

(3) Each of the first to fourth core sections includes a core sectionbuffer having an input terminal supplied with another part of theaddress signal and with the first or second activation signal whichactivates the core section corresponding to the core section buffer, foroutputting the address signal supplied, in accordance with theactivation signal supplied, an array decoder for selecting one of theplurality of memory cell arrays forming the core sections, with of usean upper bit of the address signal outputted from the core sectionbuffer, and a row decoder for selecting one of a plurality of word linesof the memory cell array selected by the array decoder, with use of alower bit of the address signal.

(4) A first output buffer is shared by the first and second coresections and a second output buffer is shared by the third and fourthcore sections.

(5) In the above (1), each of the plurality of memory cell arrays has atleast two sub-memory cell arrays, and when one of the two sub-memorycell arrays is activated, another sub-memory cell array is deactivated.

(6) In the above (1), each of the plurality of memory cell arrays has atleast two sub-memory cell arrays, and each of the sub-memory cell arraysis operated independently.

(7) In the above (1), a sense amplifier for sensing and amplifying datafrom the plurality of memory cell arrays is shared by adjacent memorycell arrays.

According to the present invention, core sections arrangedlongitudinally and laterally are activated diagonally, and activatedmemory cell arrays are dispersed. Therefore, influences from noise canbe reduced and are prevented from affecting the operation of circuits.

Also, since activated core sections are dispersed, heat generationduring operation is also dispersed. Accordingly, the present inventionis particularly advantageous when the heat generation amount is large,e.g., in case of operation at a high frequency.

Additional objects and advantages of the present invention will be setforth in the description which follows, and in part will be obvious fromthe description, or may be learned by practice of the present invention.The objects and advantages of the present invention may be realized andobtained by means of the instrumentalities and combinations particularlypointed out hereinbefore.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The accompanying drawings, which are incorporated in and constitute apart of the specification, illustrate presently preferred embodiments ofthe present invention and, together with the general description givenabove and the detailed description of the preferred embodiments givenbelow, serve to explain the principles of the present invention inwhich:

FIG. 1 is a view showing a conventional semiconductor memory device;

FIG. 2 is a view showing current flows in a conventional semiconductormemory device;

FIG. 3 is a view showing current flows in a conventional semiconductormemory device;

FIG. 4 is a view showing a semiconductor memory device according to thepresent invention;

FIG. 5 is a view showing current flows in the embodiment shown in FIG.4;

FIG. 6 is a view showing current flows in the embodiment shown in FIG.4;

FIG. 7 is a view showing a layout of power supply lines;

FIG. 8 is a circuit provided between a power supply line VEXT and apower supply line VAA;

FIG. 9 is a view showing circuit examples of a memory cell and a senseamplifier;

FIG. 10 is a view showing a layout of power supply lines according tothe present invention;

FIG. 11 is a view showing a specific pattern of a semiconductor memorydevice according to the present invention;

FIG. 12 is a view showing a circuit example of a core section buffer;

FIG. 13 is a view showing a data multiplexer;

FIG. 14 is a view showing a peripheral circuit of a memory cell array;

FIG. 15 is a view showing an embodiment in which output buffers areshared by core sections 1 and 2 as well as core sections 3 and 4;

FIG. 16 is a view showing a case where shared output buffers 30 areapplied to memory cell arrays constructed in a structure in which eachmemory cell array is activated in units of halves of a memory cell;

FIG. 17 is a view showing an embodiment in which each memory cell arrayis divided into a plurality of sub-memory arrays in a row direction;

FIG. 18 is an example in which sense amplifiers and row decoders areshared and core sections are arranged longitudinally;

FIG. 19 show a device having 4 power supply pads; and

FIG. 20 shows a device having 8 power supply pads;

FIG. 21 shows another example of activation of memory cell arrays.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments of the present invention will now be explained withreference to the drawings.

FIG. 4 is a view schematically showing a structure of a semiconductormemory device according to an embodiment of the present invention.

An output signal RAt11 from an address buffer 11 is supplied to a coresection buffer 5 connected to an upper left core section 1 and a coresection buffer 8 connected to a lower right core section 4. An outputsignal RAc11 from the address buffer 11 is supplied to a core sectionbuffer 6 connected to a lower left core section 2 and a core sectionbuffer 7 connected to an upper right core section 3. The othercomponents than those described above are the same as those of a priorart example shown in FIG. 1.

In the following, operation of the present embodiment will be described.

External address signals A0 to A11 are supplied to the address buffer11. The address buffer 11 generates control signals RAt11 and RAc11relating to rows, from a bit A11 of the external address signals. Eachof control signals RAc11 and RAt11 is an inverted signal of the other.

When the signal RAt11 is of a selected state and the signal RAc11 is ofa non-selected state, the upper left core section 1 and the lower rightcore section 4 are selected. In this state, the lower left core section2 and the upper right core section 3 are not selected but aredeactivated. Meanwhile, when the signal RAc11 is of a selected state andthe signal RAt11 is of a non-selected state, the lower left core section2 and the upper right core section 3 are selected, but the upper leftcore section 1 and lower right core section 4 are not selected. Thus,the core sections are selected diagonally.

Like in the prior art example, memory cells to be activated in selectedcore sections are dispersed.

In the present embodiment, the memory cell arrays are activateduniformly in the longitudinal and lateral directions, unlike the priorart example. Activation is not concentrated, for example, in the coresections in the left half or upper half of the device as in aconventional semiconductor memory device. Therefore, noise generatedwhen sense amplifiers are operated is dispersed longitudinally andlaterally.

FIG. 5 shows current flows when providing a power supply pad suppliedwith a power supply voltage Vcc. A power supply pad 13 is supplied witha power supply voltage Vcc and a power supply pad 14 is supplied with avoltage Vss. Arrows shown in FIG. 5 indicate main current flows to apower supply pad.

When the core sections are activated, the core section 3 or 4 is farfrom the power supply pad 13. Therefore, a voltage drop caused by wiresin the chip cannot be changed depending on the combination of coresections. The voltage drop has a maximum value smaller than that of aconventional device. Accordingly, it is possible to reduce harmfulinfluences on input pins and peripheral circuits in the vicinity of theactivated core sections.

FIG. 6 shows current flows when of providing two power supply padssupplied with a power supply voltage Vcc. The power supply pad pair 15is supplied with power supply voltages Vcc and Vss, and another powersupply pad pair 16 is also supplied with power supply voltages Vcc andVss. In the example shown in FIG. 6, the power supply pad pair 15 isprovided in the left side of an area between the core sections 1 and 2,and the power supply pad pair 16 is provided in the right side of anarea between the core sections 3 and 4. Arrows in FIG. 6 indicate mainflows of currents to the power supply pads.

The amount of currents flowing through the power supply pad pair 15 issubstantially equal to the amount of currents flowing through the powersupply pad pair 16 in either case where the core sections 1 and 4 areactivated or case where the core sections 2 and 3 are activated.Therefore, the maximum value of the currents flowing through the powersupply pad pairs 15 and 16 can be reduced more than in a conventionaldevice. As a result, noise generated by inductance applied to the powersupply pads can be reduced.

FIG. 7 shows a layout of power supply lines in the embodiment shown inFIG. 4. In FIG. 7, a reference 17 denotes pads.

Power supply lines VEXT are connected to power supply pads supplied witha power supply voltage Vcc. The power supply lines VEXT are alsoconnected to peripheral circuits, for example. Power supply lines VAAare supplied with a voltage obtained by decreasing a voltage Vcc by acircuit as shown in FIG. 8. The circuit shown in FIG. 8 is provided atthe area 19 shown in FIG. 7, for example. The power supply lines VAAserve to supply core sections of sense amplifiers with the decreasedvoltage and to supply memory cells with a voltage for restoring. Thepower supply lines VSS are connected to power supply pads supplied witha voltage VSS. The power supply lines VEXT, VAA, and VSS are connectedto each of core sections 1 to 4.

The power supply lines VEXT, VAA, and VSS are provided along lower edgesof the core sections 1 and 3 and upper edges of the core sections 2 and4. The power supply line provided along the lower edge of the coresection 1 are connected to the power supply lines provided along thelower edge of the core section 3, while the power supply lines providedalong the upper edge of the core section 2 are connected to power supplylines provided along the upper edge of the core section 4. Generally,pads are sequentially provided at an area between the upper coresections 1 and 3 and the lower core sections 2 and 4. Therefore, thepower supply lines connected to the upper core sections 1 and 3 areconnected to the power supply lines connected to the lower core sections2 and 4, only through the pads.

Suppose that the power supply pads supplied with power supply voltagesVcc and Vss are provided at an area between the core sections 3 and 4,for example, and that i expresses a current outputted from one ofactivated core sections. When the core sections 1 and 4 are activated, acurrent i flows through the power supply lines VEXT, VAA, and VSSconnected to the core sections 1 and 4, but a substantial current doesnot flow through the core sections 2 and 3 since the core sections 2 and3 are not activated.

FIG. 9 shows a circuit example of a sense amplifier and memory cells.FIG. 9 is an enlarged view of the area 18 shown in FIG. 7. The memorycells and sense amplifier shown in FIG. 9 are circuits generally used.Signals SEP and SEN are selected by an address signal A8 and aresupplied to drive sense amplifiers. When transistors 60 and 61corresponding to a core section to be activated are turned on, a voltageVAA is supplied to Pch sense amplifiers and a voltage VSS is supplied toNch sense amplifiers.

FIG. 10 shows a layout of power supply lines according to the presentinvention.

The power supply lines VEXT, VAA, and VSS connected to the core section1 are respectively connected to the power supply line VEXT, VAA, and VSSconnected to the core section 3, at an area between the core sections 1and 2. Likewise, the power supply lines VEXT, VAA, and VSS connected tothe core section 3 are respectively connected to the power supply linesVEXT, VAA, and VSS connected to the core section 4, at an area betweenthe core sections 3 and 4. The power supply lines VEXT, VAA, and VSSprovided along the lower edge of the core section 1 are connected to thepower supply lines VEXT, VAA, and VSS provided along the lower edge ofthe core section 3, and the power supply lines VEXT, VAA, and VSSprovided along the upper edge of the core section 2 are connected to thepower supply lines VEXT, VAA, and VSS provided along the upper edge ofthe core section 4.

Power supply pads supplied with power supply voltages Vcc and VSS areprovided at an area between the core sections 3 and 4, and it issupplied that i expresses a current outputted from one of activated coresections. When the core sections 1 and 4 are activated, a current{fraction (i/2+L )} flows through the power supply lines VEXT, VAA, andVSS connected to the core section 1 and also through the power supplylines VEXT, VAA, and VSS connected through the core section 2 which isnot activated.

Thus, in the layout of power supply lines according to the presentinvention, a current flows though power supply lines provided for thecore section, which is not activated, and therefore, power supply linescan be effectively used. As a result of this, the current flowingthrough each of the power supply lines is reduced to ½, and voltagedrops of the power supply lines can therefore be reduced, so thatinfluences from noise can be reduced. In addition, since power supplylines provided in the upper and lower sides of the pads are shared, thetotal line width of the power supply lines in both the upper and lowersides can be narrowed. Therefore, the chip size can be reduced and powersupply lines can be provided between pads.

FIG. 11 is a view more specifically showing the semiconductor memorydevice shown in FIG. 4.

An address buffer 11 is supplied with address signals A0 to A11. Theaddress buffer 11 outputs address signals RA0 to RA10 and controlsignals RAt11, RAc11, CAt11, and CAc11. The address signals RA0 to RA10are the same as the address signals A0 to A10. The control signals RAt11is the same as the address signal A11, and the control signal RAc11 isan inverted signal of the control signal RAt11. The control signal CAt11is the same as the address signal A11, and the control signal CAc11 isan inverted signal of the control signal CAt11.

Core section buffers 5 to 8 are supplied with the address signals RA0 toRA10. The core section buffers 6 and 7 are supplied with the controlsignal RAt11, and the core section buffers 5 and 8 are supplied with thecontrol signal RAc11.

FIG. 12 shows a circuit example of the core section buffers 5 to 8. Thecore section buffers 5 to 8 generate lower address signals RAQt0 toRAQt7 and upper address signals RAQt8 to RAQt10, RAQc9, and RAQc10, fromthe address signals Rat10 and RAc10, the control signals RAC10, and thecontrol signal RAt11 or RAc11. The core section buffers 5 to 8respectively supply corresponding core sections 1 to 4 with the signalsgenerated as above.

In the core section buffer circuit shown in FIG. 12, if the controlsignal RAt11 or RAc11 is of a low level, all the address signals RAQt0to RAQt10 become to be of a low level. As a result, no address signalsare supplied to a corresponding core section and the core section isinhibited from writing and reading data.

FIG. 13 shows a circuit example of data multiplexers 21 and 22 shown inFIG. 11. The data multiplexers 21 and 22 have an equal structure. InFIG. 13, those reference symbols of signals or the like which are notwritten in parentheses belong to the data multiplexer 21, and thosereference symbols which are written in parentheses belong to the datamultiplexer 22.

Input terminals of the data multiplexers 21 and 22 are supplied withcontrol signals CAt11 and CAc11 and also supplied with write data WDtand WDc from an input stage (not shown), i.e., a Din buffer. Each ofdata WDt and data WDc consists of inverted signals of the other data.Input/output terminals of the data multiplexer 21 are connected to RWDlines RWDL0 to RWDL7 of the core sections 1 and 3, and input/outputterminals of the data multiplexer 22 are connected to RWD lines RWDL0 toRWDL7 of the core sections 2 and 4. Output terminals of the datamultiplexers supply read data RDt to an output stage (not shown), i.e.,a Dout buffer.

In the following, a circuit equivalent to a core section 1 in the datamultiplexer 21 will be explained.

A control signal CAc11 is supplied to a first input terminal of a NORgate 32. A second input terminal of the NOR gate 32 is grounded and anoutput terminal of the NOR gate 32 is connected to control terminals ofwrite drivers 35 and 36 of through inverters 33 and 34 arranged in twostages. A data input terminal of the write driver 35 is supplied with abit WDti of data outputted from a Din buffer, and a data input terminalof the write driver 36 is supplied with data WDci outputted from the Dinbuffer. In the following, i is an integer of one of 0 to 7.

A first output terminal of the write driver 35 is connected to the gateof a p-channel MOS transistor 37, and a second output terminal of thewrite driver 35 is connected to the gate of an n-channel MOS transistor38. The source of the p-channel MOS transistor 37 is supplied with apower supply voltage Vcc. The drain of the p-channel MOS transistor 37is connected to a RWD line RWDLti of the core section 1 and the drain ofthe n-channel MOS transistor 38. The source of the n-channel MOStransistor 38 is grounded.

A first output terminal of the write driver 36 is connected to the gateof a p-channel MOS transistor 39, and a second output terminal of thewrite driver 36 is connected to the gate of an n-channel MOS transistor40. The source of the p-channel MOS transistor 39 is supplied with apower supply voltage Vcc. The drain of the p-channel MOS transistor 39is connected to a RWD line RWDLci of the core section 1 and the drain ofthe n-channel MOS transistor 40. The source of the n-channel MOStransistor 40 is grounded.

The RWD line RWDLti is connected to the gate of a p-channel MOStransistor 42 and the gate of an n-channel MOS transistor 44. The RWDline RWDLci is connected to the gate of an n-channel MOS transistor 43through an inverter 41.

The source of the p-channel MOS transistor 42 is supplied with a powersupply voltage Vcc. The drain of the p-channel MOS transistor 42 isconnected to an input line RDti of a Dout buffer and to the drain of then-channel MOS transistor 43. The source of the n-channel MOS transistor43 is connected to the drain of the n-channel MOS transistor 44, and thesource of the n-channel MOS transistor 44 is grounded.

For each bit of data and RWD lines, there is provided a circuit 30consisting of the write drivers 35 and 36, p-channel MOS transistors 37,39, and 42, n-channel MOS transistors 38, 40, 43, and 44, and inverter41. In the example shown in FIG. 13, eight circuits 30 are provided.

The data multiplexers 21 and 22 as described above supply RWD lines withdata WD as write data from the Din buffer during write operation, andalso supply the Dout buffer with data as read data from RWD lines.

FIG. 14 shows a peripheral circuit of memory cell arrays and senseamplifiers. This figure is an enlarged view of an area 20 in FIG. 11.

An array decoder 23 is provided for each of the memory cell arrays 10.An input terminal of the array decoder 23 is supplied with upper addresssignals RA8 to RA10. The array decoder 23 determines whether or not acorresponding memory cell 10 and a corresponding sense amplifier 9 areactivated in accordance with the upper address signals.

When a memory cell array 10 is activated, a partial decoder 24 and a rowdecoder 25 corresponding to the memory cell array 10 are activated. Thepartial decoder 24 and the row decoder 25 select and activate a wordline from a half of the memory cell array, and therefore, two partialdecoders 24 and two row decoders 25 are provided for each cell array.The partial decoder 24 and the row decoder 25 decode lower addresssignals RA0 to RA7 and select a word line 27 in the memory cell array10. In the circuit shown in FIG. 14, two row decoders 25 are providedfor one memory cell array 10, and therefore, the row decoder 25 selectsone word line from the half of the memory cell array 10. DQ buffers 26are provided between the RWD line and the sense amplifier 9.

The present invention is not limited to the embodiment described abovebut may be modified as follows, for example.

FIG. 15 shows an embodiment where output buffers 30 are shared by coresections 1 and 2 and by core sections 3 and 4.

In the present invention, for example, as is indicated by simultaneouslyactivated core sections hatched by oblique lines, the core sections 1and 2 or the core sections 3 and 4 are not simultaneously activated.Therefore, outputs from activated core sections can be selectivelyextracted from output buffers 30 even if output buffers are shared bycore sections 1 and 2 and also in common by core sections 3 and 4, as inthe present embodiment. In this manner, the chip structure can furtherbe reduced.

FIG. 16 shows a case in which sharing of the output buffers 30 shown inFIG. 15 is applied to memory cell arrays constructed in a structure inwhich halves (which are referred to as a first sub-memory array 91 and asecond sub-memory array 92) of each memory cell array 9 are separatelyactivated. FIG. 16 shows only output lines from one memory cell array.In FIG. 16, the first sub-memory array 91 and the second sub-memoryarray 92 are connected to each other such that data from the array 91and data from the array 92 are respectively amplified by senseamplifiers (not shown) and thereafter pass through switching elements31. Like the case of FIG. 15, output buffers are shared by the coresections 1 and 2 and also shared by the core sections 3 and 4.

In the present embodiment, the structure as described above is realizedand contributes to a reduction of the chip area, on the grounds thatcore sections provided on a diagonal line are simultaneously activatedand since first and second sub-memory arrays are not simultaneouslyactivated.

FIG. 16 shows an embodiment in which each memory cell array is dividedand subjected to switching by a switching element so that output buffersare shared. However, sense amplifiers may be shared by adjacent memorycell arrays. In this case, adjacent memory cell arrays sharing a senseamplifier are selectively connected to the sense amplifier by makingconnection/disconnection therebetween by a switching element. Also, likein FIG. 15, the core sections 1 and 2 share output buffers and the coresections 3 and 4 share output buffers. In the present embodiment, thenumber of sense amplifiers can be reduced in comparison with thestructure shown in FIG. 15, so that the chip area can further reduced.

FIG. 17 shows an embodiment in which memory cell arrays in each coresection are selectively activated. In FIG. 17, the memory cell arrayscan be activated independently. In this case, the core sections 1 to 4can be simultaneously activated, and a part of the core section 1 and apart of core section 2 arranged on diagonal line, a part of the coresection 3 and a part of core section 4 arranged on diagonal line, aresimultaneously activated.

By combining the structure in which buffers or sense amplifiers areshared as described above with the present invention, it isadvantageously possible to realize a semiconductor memory device whichis capable of performing multi-bit simultaneous output with reducednoise, without increasing the chip area.

The present invention is not limited to the embodiments described above.

Although the core sections are arranged apart from each other in theembodiments described above, the core sections may be positionedcontinuously. For example, FIG. 18 shows an example in which senseamplifiers are shared and core sections are arranged longitudinally.

The above description has been made of an example using four coresections. However, this example merely cites a structure of a minimumunit, and therefore, more core sections than four may be included in thestructure.

In this case, the present invention needs only to be arranged so as tosimultaneously activate core sections provided on a diagonal line. A11the memory cell arrays in a core section need not be simultaneouslyactivated, but at least one memory cell array (or one sub-memory cellarray where sub-memory cell arrays are included) needs to be activated.

In the above embodiment, a case where a device has two power supply padsis explained, but the present invention can be applied to a devicehaving 3 or more power supply pads. FIGS. 19 and 20 show devices having4 and 8 power supply pads, respectively.

In FIG. 19, for example, each core section has eight memory cell arrays,and parts of the memory cell arrays on diagonal line in core sections 1and 2 are simultaneously activated. Specifically, each of the coresections are divided into two sections (hereinafter referred to as asub-core section), and the power supply pads are arranged forcorresponding sub-core sections. For example, first power supply padshared by one of the sub-core sections of the core section 1 and one ofthe sub-core sections of the core section 2. With this configuration,for example, memory cell arrays in one of the sub-core sections in thecore section 1 and memory cell arrays in one of sub-core sections in thecore section 2, which share a power supply pad and are arrangeddiagonally, are simultaneously activated. An operation of the coresections 3 and 4 arranged on the left side is the same as above andtherefore explanation will be omitted.

FIG. 20 shows an example of increasing the number of power supply pads.Four memory cell array share one power supply pad, and memory cellarrays which are arranged diagonally are simultaneously activated.

FIG. 21 shows an example of memory cell arrays to be simultaneouslyactivated which are arranged in a mirror by the center of the chip.

As described above, the present invention can employ any layout oractivation method of memory cell arrays, when simultaneously activatedmemory cell arrays are not concentrated.

Further, the present invention can be more variously modified within thescope of the subject matter of the present invention.

Additional advantages and modifications will readily occur to thoseskilled in the art. Therefore, the present invention in its broaderaspects is not limited to the specific details, representative devices,and illustrated examples shown and described herein. Accordingly,various modifications may be made without departing from the spirit orscope of the general inventive concept as defined by the appended claimsand their equivalents.

What is claimed is:
 1. A semiconductor memory device comprising: a firstcore section including a plurality of memory cell arrays and a pluralityof sense amplifiers, said first core section having a rectangular shapewith a long side and a short side; a second core section including aplurality of memory cell arrays and a plurality of sense amplifiers,said second core section having a rectangular shape with a long side anda short side, the long side of said second core section facing the longside of said first core section; a third core section including aplurality of memory cell arrays and a plurality of sense amplifiers,said third core section having a rectangular shape with a long side anda short side, the short side of said third core section facing the shortside of said first core section; a fourth core section including aplurality of memory cell arrays and a plurality of sense amplifiers,said fourth core section having a rectangular shape with a long side anda short side, the long side of said fourth core section facing the longside of said third core section; an input circuit for inputting firstand second activation signals; a first control signal line coupledbetween said first core section and said fourth core section to activatesaid first core section and said fourth core section in accordance withsaid first activation signal; and a second control signal line coupledbetween said second core section and said third core section to activatesaid second core section and said third core section in accordance withsaid second activation signal.
 2. A semiconductor memory devicecomprising: a first core section including a plurality of memory cellarrays and a plurality of sense amplifiers, said first core sectionhaving a rectangular shape with a long side and a short side; a secondcore section including a plurality of memory cell arrays and a pluralityof sense amplifiers, said second core section having a rectangular shapewith a long side and a short side, the long side of said second coresection facing the long side of said first core section; a third coresection including a plurality of memory cell arrays and a plurality ofsense amplifiers, said third core section having a rectangular shapewith a long side and a short side, the short side of said third coresection facing the short side of said first core section; a fourth coresection including a plurality of memory cell arrays and a plurality ofsense amplifiers, said fourth core section having a rectangular shapewith a long side and short side, the long side of said fourth coresection facing the long side of said third core section; an inputterminal supplied with an address signal to output a first or secondactivation signal in accordance with a part of the address signal; afirst control signal line coupled to said input terminal, said firstcore section and said fourth core section to activate one array of saidfirst core section and one array of said fourth core section inaccordance with a part of the address signal; and a second controlsignal line coupled to said input terminal, said second core section andsaid third core section to activate one array of said second coresection and one array of said third core section in accordance with thepart of the address signal.
 3. A semiconductor memory device comprising:a first core section including a plurality of memory cell arrays and aplurality of sense amplifiers, said first core section having arectangular shape with a long side and a short side; a second coresection including a plurality of memory cell arrays and a plurality ofsense amplifiers, said second core section having a rectangular shapewith a long side and a short side, the long side of said second coresection facing the long side of said first core section; a third coresection including a plurality of memory cell arrays and a plurality ofsense amplifiers, said third core section having a rectangular shapewith a long side and a short side, the short side of said third coresection facing the short side of said first core section; a fourth coresection including a plurality of memory cell arrays and a plurality ofsense amplifiers, said fourth core section having a rectangular shapewith a long side and a short side, the long side of said fourth coresection facing the long side of said third core section; an inputterminal supplied with an address signal to output a first or secondactivation signal in accordance with a part of the address signal; afirst control signal line coupled to said input terminal, said firstcore section and said fourth core section to activate said plurality ofmemory cell arrays of said first core section and said plurality ofmemory cell arrays of said fourth core section in accordance with thepart of the address signal; and a second control signal line coupled tosaid input terminal, said second core section and said third coresection to activate said plurality of memory cell arrays of said secondcore section and said plurality of memory cell arrays of said third coresection in accordance with the part of the address signal.
 4. Asemiconductor memory device comprising: a first core section including aplurality of memory cell arrays and a plurality of sense amplifiers,said first core section having a rectangular shape with a long side anda short side; a second core section including a plurality of memory cellarrays and a plurality of sense amplifiers, said second core sectionhaving a rectangular shape with a long side and a short side, the longside of said second core section facing the long side of said first coresection; a third core section including a plurality of memory cellarrays and a plurality of sense amplifiers, said third core sectionhaving a rectangular shape with a long side and a short side, the shortside of said third core section facing the short side of said first coresection; a fourth core section including a plurality of memory cellarrays and a plurality of sense amplifiers, said fourth core sectionhaving a rectangular shape with a long side and a short side, the longside of said fourth core section facing the long side of said third coresection; an address buffer having an input terminal supplied with anaddress signal to output a first or second activation signal inaccordance with a part of the address signal; a first control signalline coupled to said address buffer, said first core section and saidfourth core section to activate said first core section and said fourthcore section in accordance with the first activation signal; and asecond control signal line coupled to said address buffer, said secondcore section and said third core section to activate said second coresection and said third core section in accordance with the secondactivation signal.
 5. A semiconductor memory device comprising: a firstcore section including a plurality of memory cell arrays and a pluralityof sense amplifiers, said first core section having a rectangular shapewith a long side and a short side; a first core section buffer connectedto said first core section; a second core section including a pluralityof memory cell arrays and a plurality of sense amplifiers, said secondcore section having a rectangular shape with a long side and a shortside, the long side of said second core section facing the long side ofsaid first core section; a second core section buffer connected to saidsecond core section; a third core section including a plurality ofmemory cell arrays and a plurality of sense amplifiers, said third coresection having a rectangular shape with a long side and a short side,the short side of said third core section facing the short side of saidfirst core section; a third core section buffer connected to said thirdcore section; a fourth core section including a plurality of memory cellarrays and a plurality of sense amplifiers, said fourth core sectionhaving a rectangular shape with a long side and a short side, the longside of said fourth core section facing the long side of said third coresection; a fourth core section buffer connected to said fourth coresection; an address buffer having an input terminal supplied with anaddress signal to output a first or second activation signal inaccordance with a part of the address signal; a first control signalline coupled to said address buffer, said first core section buffer andsaid fourth core section buffer to activate said first core section andsaid fourth core section in accordance with the first activation signal;and a second control signal line coupled to said address buffer, saidsecond core section buffer and said third core section buffer toactivate said second core section and said third core section inaccordance with the second activation signal.
 6. A semiconductor memorydevice comprising: a first core section including a plurality of memorycell arrays respectively provided in a plurality of lines andrespectively having a rectangular shape with a long side and a shortside, and a plurality of sense amplifiers provided in a plurality oflines respectively having a rectangular shape with a long side and ashort side; a second core section including a plurality of memory cellarrays respectively provided in a plurality of lines and respectivelyhaving a rectangular shape with a long side and a short side, and aplurality of sense amplifiers provided in a plurality of linesrespectively having a rectangular shape with a long side and a shortside, and provided adjacent to said first core section, wherein theshort side of each memory cell array in said second core section facingto the short side of each memory cell array in said first core section,and the short side of each sense amplifier in said second core sectionfacing to the short side of each sense amplifier in said first coresection; a third core section including a plurality of memory cellarrays respectively provided in a plurality of lines and respectivelyhaving a rectangular shape with a long side and a short side, and aplurality of sense amplifiers provided in a plurality of linesrespectively having a rectangular shape with a long side and a shortside; provided adjacent to said first core section, wherein thelongitudinal direction of each memory cell array in said third coresection parallels the longitudinal direction of each memory cell arrayin said first core section, and the longitudinal direction of the senseamplifier in said third core section parallels the longitudinaldirection of each sense amplifier in said first core section; a fourthcore section including a plurality of memory cell arrays respectivelyprovided in a plurality of lines and respectively having a rectangularshape with a long side and short side, and a plurality of senseamplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side; provided adjacentto said first core section, wherein the short side of each memory cellarray in said fourth core section facing to the short side of eachmemory cell array in said third core section, and the short side of eachsense amplifier in said fourth core section facing the short side ofeach sense amplifier in said third core section; an input terminalsupplied with an address signal to output a first or second activationsignal in accordance with a part of the address signal; a first controlsignal line coupled to said input terminal, said first core section andsaid fourth core section to activate one array of said first coresection and one array of said fourth core section in accordance with thepart of the address signal; and a second control signal line coupled tosaid input terminal, said second core section and said third coresection to activate one array of said second core section and one arrayof said third core section in accordance with the part of the addresssignal.
 7. A semiconductor memory device comprising: a first coresection including a plurality of memory cell arrays respectivelyprovided in a plurality of lines and respectively having a rectangularshape with a long side and a short side, and a plurality of senseamplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side; a second coresection including a plurality of memory cell arrays respectivelyprovided in a plurality of lines and respectively having a rectangularshape with a long side and a short side, and a plurality of senseamplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side, and providedadjacent to said first core section, wherein the short side of eachmemory cell array in said second core section facing to the short sideof each memory cell array in said first core section, and the short sideof each sense amplifier in said second core section facing the shortside of each sense amplifier in said first core section; a third coresection including a plurality of memory cell arrays respectivelyprovided in a plurality of lines and respectively having a rectangularshape with a long side and a short side, and a plurality of senseamplifiers provided in a plurality of lines respectively having arectangular shape with a long side and short side, and provided adjacentto said first core section, wherein the longitudinal direction of eachmemory cell array in said third core section parallels the longitudinaldirection of each memory cell array in said first core section, and thelongitudinal direction of each sense amplifier in said third coresection parallels the longitudinal direction of each sense amplifier insaid first core section; a fourth core section including a plurality ofmemory cell arrays respectively provided in a plurality of lines andrespectively having a rectangular shape with a long side and a shortside, and a plurality of sense amplifiers provided in a plurality oflines respectively having a rectangular shape with a long side and ashort side, and provided adjacent to said first core section, whereinthe short side of each memory cell array in said fourth core sectionfacing to the short side of each memory cell array in said third coresection, and the short side of each sense amplifier in said fourth coresection facing to the short side of each sense amplifier in said thirdcore section; a first input terminal supplied with a supply voltageprovided between said first core section and said second core section; asecond input terminal supplied with the supply voltage provided betweensaid third core section and said fourth core section; and wherein anamount of electric current which flows when said first core section andsaid fourth core section are activated is substantially equal to anamount of electric current which flows when said second core section andsaid third core section are activated.
 8. A semiconductor memory deviceaccording to claim 7, further comprising: a first output buffer coupledbetween said first core section and said second core section, and asecond output buffer coupled between said third core section and saidfourth core section.
 9. A semiconductor memory device comprising: afirst core section including a plurality of sub-memory cell arraysrespectively provided in a plurality of lines and respectively having arectangular shape with a long side and short side, and a plurality ofsense amplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side; a second coresection including a plurality of sub-memory cell arrays respectivelyprovided in a plurality of lines and respectively having a rectangularshape with a long side and a short side, and a plurality of senseamplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side, and providedadjacent to said first core section, wherein the short side of eachsub-memory cell array in said second core section facing to the shortside of each memory cell array in said first core section, and the shortside of each sense amplifier in said second core section facing theshort side of each sense amplifier in said first core section; a thirdcore section including a plurality of sub-memory cell arraysrespectively provided in a plurality of lines and respectively having arectangular shape with a long side and a short side, and a plurality ofsense amplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side, and providedadjacent to said first core section, wherein the longitudinal directionof each sub-memory cell array in said third core section parallels thelongitudinal direction of each sub-memory cell array in said first coresection, and the longitudinal direction of each sense amplifier in saidthird core section parallels the longitudinal direction of each senseamplifier in said first core section; a fourth core section including aplurality of sub-memory cell arrays respectively provided in a pluralityof lines and respectively having a rectangular shape with a long sideand a short side, and a plurality of sense amplifiers provided in aplurality of lines respectively having a rectangular shape with a longside and a short side, and provided adjacent to said first core section,wherein the short side of each sub-memory cell array in said fourth coresection facing the short side of each sub-memory cell array in saidthird core section, and the short side of each sense amplifier in saidfourth core section facing the short side of each sense amplifier insaid third core section; a first input terminal supplied with a supplyvoltage provided between said first core section and said second coresection; a second input terminal supplied with the supply voltageprovided between said third core section and said fourth core section;and wherein the amount of electric current which flows when said firstcore section and said fourth core section are activated is substantiallyequal to the amount of the electric current which flows when said secondcore section and said third core section are activated.
 10. Asemiconductor memory device comprising: a first core section including aplurality of sub-memory cell arrays respectively provided in a pluralityof lines and respectively having a rectangular shape with a long sideand a short side, and a plurality of sense amplifiers provided in aplurality of lines respectively having a rectangular shape with a longside and a short side; a second core section including a plurality ofsub-memory cell arrays respectively provided in a plurality of lines andrespectively having a rectangular shape with a long side and a shortside, and a plurality of sense amplifiers provided in a plurality oflines respectively having a rectangular shape with a long side and ashort side, and provided adjacent to said first core section, whereinthe short side of each sub-memory cell array in said second core sectionfacing the short side of each memory cell array in said first coresection, and the short side of each sense amplifier in said second coresection facing the short side of each sense amplifier in said first coresection; a third core section including a plurality of sub-memory cellarrays respectively provided in a plurality of lines and respectivelyhaving a rectangular shape with a long side and a short side, and aplurality of sense amplifiers provided in a plurality of linesrespectively having a rectangular shape with a long side and a shortside, and provided adjacent to said first core section, wherein thelongitudinal direction of each sub-memory cell array in said third coresection parallels the longitudinal direction of each sub-memory cellarray in said first core section, and the longitudinal direction of eachsense amplifier in said third core section parallels the longitudinaldirection of each sense amplifier in said first core section; and afourth core section including a plurality of sub-memory cell arraysrespectively provided in a plurality of lines and respectively having arectangular shape with a long side and a short side, and a plurality ofsense amplifiers provided in a plurality of lines respectively having arectangular shape with a long side and a short side, and providedadjacent to said first core section, wherein the short side of eachsub-memory cell array in said fourth core section facing the short sideof each sub-memory cell array in said third core section, and the shortside of each sense amplifier in said fourth core section facing theshort side of each sense amplifier in said third core section, whereinany sub-memory cell array of said first core section and any sub-memorycell array of said second core section are not simultaneously activated,and any sub-memory cell array of said third core section and anysub-memory cell array of said fourth core section are not simultaneouslyactivated.
 11. A semiconductor memory device according to claim 9,wherein while said first core section and said fourth core section areactivated, one sub-memory cell array of said first core section and theone sub-memory cell array of said fourth core section are simultaneouslyactivated, and while said second core section and said third coresection are activated, one sub-memory cell array of said second coresection and the one sub-memory cell array of said third e section aresimultaneously activated.